Devices and Amplifier Design. Electronics from Theory Into by J. E. Fisher, H. B. Gatland and P. Hammond (Auth.)

By J. E. Fisher, H. B. Gatland and P. Hammond (Auth.)

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However, even though the input resistance can be very high (several ΜΩ), the base of the transistor must always draw a current which is equal to the output current divided by the current gain. ) For RL = 1 kfi, hfe = 50 and hie = 2 kil, Rin = 53 kft. An approximation frequently used for the emitter follower input resistance is Rin = hfeRL. Input resistance curves are shown in Fig. 37. Output resistance In common emitter operation the output resistance remains relatively constant as the source resistance Rs changes, but varies for the other two connections as shown in Fig.

The short-circuit current gain, hfe, remains relatively constant and can be used as a "figure of merit" when comparing devices. The short-circuit input resistance, hie, is inversely proportional to collector current. An estimate of this parameter is provided by the relation hie =F Tehfe, 30 ELECTRONICS FROM THEORY INTO PRACTICE 20 h rte /IO J S 10 6 4 2 10 h. / k ü 06 04 02 01 01 0-2 0 4 0-6 10 Ic> 2 4 6 10 hre/ioht / I 0 3 mA Fig. 26. Variations of hybrid parameters with changes in collector current.

Alternatively, the common emitter hybrid equivalent network can be rearranged for each connection as in Fig. 34b. If RL is less than 11 hoe, the networks can be considerably simplified without introducing much error (Fig. 34c). Current gain The current gain for the hybrid network is, from Fig. 35b, ^ =-r^^. 30) If GL is large compared with fi22, the current gain approaches the short-circuit value h2\. For the common emitter connection, h2\ = ß = hfe. For common base, from Fig. 98 for common base operation, and numerically equal to a.

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