Contacts to Semiconductors: Fundamentals and Technology by Leonard J. Brillson

By Leonard J. Brillson

The authors current the cutting-edge in growing to be, processing, and characterizing digital junctions. total, they've got assembled a extensive array of the most recent semiconductor interface technology and know-how, starting from complicated ohmic, Schottky, and heterojunction contacts to the sophisticated views of microscopic junctions gleaned from ultrahigh vacuum floor technological know-how concepts. huge development has been made in those components over the past few years. This publication is meant for technologists and good kingdom researchers alike.

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They prepared NiGe contacts by using sputter-deposition techniques where Ni was directly deposited onto the GaAs substrates. To reduce the contact metal sheet resistance, a WN layer was deposited on the Ge layer followed by Au deposition. The WN barrier layer blocked Au diffusion toward the GaAs Ohmic Contacts to GaAs and Other III-V Compounds 29 substrate, thus Au did not influence the contact resistance. The Ni/Ge/WN/ Au contact annealed at 500°C for 10 min. provided a Pc value of 2 x 1 O-e Qcm2 • This contact was stable at 500°C for 1 hr.

1 eV. 1 eV to allow electron tunneling. Barrier thinning could take place if the surface region was highly doped. High-resolution backside SIMS and cross-sectional TEM with marker layers have shown that a 25 ± 10 A regrown layer exists at the interface which may have significant Ge incorporation. Analytic solutions for band-bending in the presence of a highly doped surface region may lead to insight into the type of surface modification necessary to result in the observed contact resistivity behavior.

The temperature dependence of contact resistivity as a function of doping and composition is dependent upon the exact nature of the metallurgical changes at the interface. For instance, the fit of contact resistivity as a function of substrate doping (Fig. 20) to Eq. 03 ~ '7 E 10 11 9000 r· . "- ... 7000<:' f .... 0 a 4000 x a 0.. 0" a. -... W I L3 ...... :-::-'--' 100 1000/T[K] Figure 21. (111) 42 Contacts to Semiconductors different doping levels. This could occur if the GaAs surface region was doped heavily enough to bring the conduction band edge down to the level ofthe effective barrier height within the thin modified interfacial region.

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